CY62137FV30LL-45BVXI
Active and preferred
RoHS Compliant
Lead-free

CY62137FV30LL-45BVXI

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CY62137FV30LL-45BVXI
CY62137FV30LL-45BVXI


Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial

OPN
CY62137FV30LL-45BVXI
Product Status active and preferred
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name VFBGA-48 (51-85150)
Packing Size 960
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY62137FV30LL-45BVXI is a 2-Mbit (128K × 16) CMOS SRAM for battery-powered systems, offering 45 ns access in a 48-ball Pb-free VFBGA. It operates from 2.2 V to 3.6 V over -40°C to +85°C. Active ICC is 1.6 mA typ at 1 MHz (13 mA typ at fmax), with automatic power-down standby of 1 µA typ and 5 µA max. Byte enables (BHE/BLE), CE, OE and WE support flexible read/write and memory expansion.

Features

  • 2-Mbit SRAM, 128K × 16
  • 45 ns read/write cycle time
  • VCC operating range 2.2 V to 3.6 V
  • Ambient TA −40°C to +85°C
  • 1.6 mA typ ICC at 1 MHz
  • 13 mA typ ICC at fmax
  • 1 µA typ standby current (ISB)
  • 5 µA max standby current (ISB)
  • Auto power-down when deselected
  • BLE/BHE byte enables (8-bit)
  • Data retention at VCC = 1.5 V
  • ICCDR max 4 µA at 1.5 V

Benefits

  • 16-bit bus boosts bandwidth
  • 45 ns access reduces CPU stalls
  • 2.2–3.6 V fits 3 V rails
  • −40 to +85°C handles harsh envs
  • Low active current cuts energy use
  • Low standby extends battery life
  • Auto power-down saves idle power
  • Byte writes reduce update energy
  • High-Z outputs ease bus sharing
  • 1.5 V retention preserves data
  • CE/OE control simplifies expansion
  • Low leakage supports data integrity

Applications

Documents

Design resources

Developer community