CY15E064J-SXAT
Active and preferred
RoHS Compliant
Lead-free

CY15E064J-SXAT

package

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CY15E064J-SXAT
CY15E064J-SXAT

Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Automotive(A)
  • Speed
    0 ns
Recommended
OPN
CY15E064J-SXAT
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The CY15E064J-SXAT is a 64-Kbit (8K × 8) automotive-grade serial F-RAM memory with 100 trillion (10^14) read/write cycles and 151-year data retention. It operates from 4.5 V to 5.5 V across -40°C to +85°C, features low power (100 μA active, 4 μA standby), and supports up to 1 MHz I2C interface. NoDelay™ writes and direct hardware replacement for serial EEPROM make it ideal for frequent, rapid-write automotive and industrial applications where reliability is critical.

Features

  • 64-Kbit F-RAM organized as 8K × 8
  • 100 trillion read/write cycle endurance
  • 151-year data retention at 65°C
  • NoDelay™ instant write technology
  • I2C serial interface up to 1 MHz
  • 100 μA active, 4 μA standby current (typ)
  • VDD operation from 4.5 V to 5.5 V
  • –40°C to +85°C operating temperature
  • Write protection via WP pin
  • Schmitt trigger inputs for noise immunity
  • 8 pF max output pin capacitance (SDA)
  • 2 kV HBM ESD protection

Benefits

  • Enables reliable frequent data logging
  • Eliminates data loss from power failure
  • No write delays, faster system response
  • Drop-in replacement for I2C EEPROM
  • Reduces power consumption in designs
  • Operates in harsh environments
  • Protects data from accidental writes
  • Resists noise for robust communication
  • Supports long product lifetime
  • Handles high ESD environments
  • Simplifies system design
  • Maintains data for decades

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