not for new design
RoHS Compliant
Lead-free

BFP843F

ea.
in stock

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BFP843F
BFP843F
ea.

Product details

  • fT
    80 GHz
  • Gmax
    24 dB @900 MHz
  • IC max
    55 mA
  • NFmin
    0.80 dB @900 MHz
  • OIP3
    23.5 dBm
  • Package
    TSFP-4-1
  • Ptot
    125 mW
  • VCEO max
    2.25 V
OPN
BFP843FH6327XTSA1
Product Status not for new design
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status not for new design
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT).

Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency fT = 60 GHz to enable best in class noise figure: NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
  • High gain Gms = 18 dB at 5.5 GHz, 1.8 V, 15 mA
  • OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
  • Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)

Applications

Documents

Design resources

Developer community

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