Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
BFP843F
END OF LIFE
discontinued
RoHS Compliant
Lead-free

BFP843F

END OF LIFE

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BFP843F
BFP843F

Product details

  • fT
    80 GHz
  • Gmax
    24 dB @900 MHz
  • IC max
    55 mA
  • NFmin
    0.80 dB @900 MHz
  • OIP3
    23.5 dBm
  • Package
    TSFP-4-1
  • Ptot
    125 mW
  • VCEO max
    2.25 V
OPN
BFP843FH6327XTSA1
Product Status discontinued
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status discontinued
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT).

Features

  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
  • High transition frequency fT = 60 GHz to enable best in class noise figure: NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA
  • High gain Gms = 18 dB at 5.5 GHz, 1.8 V, 15 mA
  • OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
  • Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)

Applications

Documents

Design resources

Developer community