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Please note that this is an end of life product. See newer alternative product version
Please note that this is an end of life product. See newer alternative product version
2N6849
Product details
-
ConfigurationDiscrete
-
ID (@100°C) max-4.1 A
-
ID (@25°C) max-6.5 A
-
LanguageSPICE
-
PackageTO-205AF
-
PolarityP
-
Product CategoryHigh Reliability MOSFETs
-
QPL Part Number2N6849
-
QualificationDLA
-
RDS (on) (@25°C) max300 mΩ
-
VBRDSS min-100 V
-
Voltage Class100 V
|
OPN
|
2N6849EWSA1 |
|---|---|
| Product Status | discontinued |
| Infineon Package | |
| Package Name | TO-205AF (TO-39) |
| Packing Size | 1 |
| Packing Type | TRAY |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead-free | No |
| Halogen Free | No |
| RoHS Compliant | No |
|
|
|
| Product Status | discontinued |
|---|---|
| Infineon Package | |
| Package Name | TO-205AF (TO-39) |
| Packing Size | 1 |
| Packing Type | TRAY |
| Moisture Level | NA |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
2N6849 is a high reliability, -100V, single, P-channel MOSFET in a TO-205AF package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications.
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