SiC for automotive applications
Gearing up for a new generation of power electronics
Demand for plug-in hybrid and all-electric vehicles (xEV) continues to rise. These vehicles are packed full of power electronics – most of which are currently based on silicon. However, the latest xEV designs call for advances in efficiency and power density. Silicon carbide (SiC) is emerging as the material of choice to overcome the performance plateau of silicon. Highlights such as low switching losses, high temperature capability and high switching frequency, make it ideal to meet best xEV requirements. SiC based solutions are promised to be more efficient, lighter and compacter than conventional applications.
Number one in automotive power semiconductors worldwide, Infineon has developed one of the broadest technology portfolio available on the market. The company has developed expertise in silicon, SiC, gallium nitride (GaN), complemented by innovative packaging and gate driver solutions. Infineon is now leveraging over five decades of experience in both high-voltage components and automotive semiconductors to bring the benefits of SiC technology to the automotive world.
Infineon will actively drive down the cost/performance ratio of SiC and accelerate its market introduction. Building on a recognized expertise in automotive systems, Infineon will support his partners to design the next generation xEV that take full advantage of the performance capabilities of SiC, in order to create additional value for its customers.
Once Infineon is ready for an open market approach, customers can look forward to compact and highly efficient SiC devices offering performance and efficiency gains of up to 10 percent for a variety of driving scenarios.