- Low device capacitances
- Temperature independent switching losses
- Intrinsic diode with low reverse recovery charge
- Threshold-free on-state characteristics
Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers to harness never before seen levels of efficiency and system flexibility.
Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.
In comparison to traditional silicon (Si) based high voltage (>600V) switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.
Infineon’s unique 1200V SiC MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on.
All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.
(3-Pin & 4-Pin devices)
(Sixpack, Booster, Halfbridge)
TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. Easy1B modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.
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Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC enables you to develop radical new product designs with best system cost-performance ratio.
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