CoolSiC™ MOSFET

  • Products
  • Highlights
  • Documents
  • Boards
  • Simulation
  • Videos
  • Forums
  • Support
  • Software & Tools
  • myInfineon

Infineon CoolSiC™ semiconductor solutions are the next essential step towards an energy-smart world.


CoolSiC™ MOSFET

 

Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Si based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers to harness never before seen levels of efficiency and system flexibility.  


CoolSiC Brochure Appnote EiceDRIVER CoolSiC Video  

 

Features

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics

Benefits

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation

Product Product Status Order Online Packages Green VDS Configuration ID RDS (on) Technology Housing Dimensions (width) Dimensions (length)
Matching Results: 4
descending ascending         descending ascending descending ascending descending ascending descending ascending descending ascending descending ascending descending ascending descending ascending
FF11MR12W1M1_B11  

active and preferred

Buy online

AG-EASY1B-2

1200.0 V
Dual
100.0 A
11.0 mΩ
CoolSiC™ MOSFET
EasyDUAL™ 1B
33.8 mm
62.8 mm
FF23MR12W1M1_B11  

active and preferred

Buy online

AG-EASY1B-2

1200.0 V
Dual
50.0 A
23.0 mΩ
CoolSiC™ MOSFET
EasyDUAL™ 1B
33.8 mm
62.8 mm
DF11MR12W1M1_B11  

active and preferred

Buy online

AG-EASY1B-2

1200.0 V
Booster with NTC
100.0 A
23.0 mΩ
CoolSiC™ MOSFET
EasyDUAL™ 1B
33.8 mm
62.8 mm
DF23MR12W1M1_B11  

active and preferred

Buy online

AG-EASY1B-2

1200.0 V
Booster with NTC
50.0 A
45.0 mΩ
CoolSiC™ MOSFET
EasyDUAL™ 1B
33.8 mm
62.8 mm

Infineon’s CoolSiC™ technology enables radical new product designs.

Enhancing new materials to offer customers extended levels of performance

Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.

 

In comparison to traditional silicon (Si) based high voltage (>600V) switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.

 

Infineon’s unique 1200V SiC MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on.

 

All this results in a robust SiC MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.


Announcement of portfolio extension at PCIM 2017

Overview Portfolio Extension CoolSiC™ MOSFET

 

TO-247
(3-Pin & 4-Pin devices)
Easy 1B
(Sixpack, Booster, Halfbridge)
Easy 2B
(Halfbridge)
62 mm
(Halfbridge)

IMZ120R045M1

IMW120R045M1

FF11MR12W1M1_B11

DF11MR12W1M1_B11

FF23MR12W1M1_B11

DF23MR12W1M1_B11

FS45MR12W1M1_B11

FF8MR12W2M1_B11 FF6MR12KM1

CoolSiC™ MOSFET first products are targeted for photovoltaic inverters, battery charging and energy storage.

TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. Easy1B modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.


Diagram-CoolSIC-MOSFET-Losses

 

Diagram CoolSiC Output characteristics


Product Brief

Title Size Date Version
338 KB 15 May 2017 02_00

Product Brochure

Title Size Date Version
3.2 MB 15 May 2017 02_00

Application Notes

Title Size Date Version
84 KB 09 Apr 2009
606 KB 12 Aug 2015 01_00
1.2 MB 05 Jan 2017 02_03
295 KB 13 Jan 2010
731 KB 24 Mar 2017 01_00

Article

Title Size Date Version
289 KB 04 Jul 2017 01_00
540 KB 15 May 2017 01_00
235 KB 15 May 2017 01_00
1.2 MB 21 Jul 2016 01_00
117 KB 21 Jul 2016 01_00
460 KB 21 Jul 2016 01_00
1.7 MB 10 Aug 2016 01_00

Product Catalogue

Title Size Date Version
2.9 MB 12 May 2017 03_00

Product Selection Guide

Title Size Date Version
3.5 MB 15 May 2017 01_00
 CoolSiC™ - Revolution to rely on  

CoolSiC™ - Revolution to rely on

Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC enables you to develop radical new product designs with best system cost-performance ratio.

 
Length 2:25

Find an answer to your question

Infineon welcomes your comments and questions.

If you have any questions concerning our products, please fill out the following form. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.

You will receive a confirmation E-mail to validate your address in our system. Any attached file to the reply which will help to support your inquiry is highly appreciated.

For more information about our privacy policy please click on Privacy Policy
All fields marked with an asterisk (*) are mandatory.

Where to buy

Please use our location finder to get in contact with your nearest Infineon distributor or sales office

Find a location

Ask Infineon