FF3MR12KM1
Overview
Half-bridge 1200 V CoolSiC™ MOSFET Module
62 mm 1200 V, 3 mΩ half-bridge module with CoolSiC™ MOSFET.
New generation of M1H product FF2MR12KM1H coming soon.
Summary of Features
- High current density
- Low switching losses
- Superior gate oxide reliability
- Highest robustness against humidity
- Robust integrated body diode, and thus optimal thermal conditions
- High cosmic ray robustness
- High speed switching module with very low losses
- Symmetrical module design and switching behavior of upper and lower switch
- Standard construction technique of the module and therefore known reliable. Production in the 62mm high volume production line
Benefits
- Minimizes cooling efforts due to very low switching losses
- High switching frequency allows using less magnetic components. Therefore reduction in volume and size/dimension
- Reduction of system costs, due to module benefits
Diagrams
Support
