Source-Down

Overview

OptiMOS™ power MOSFET Source-Down family with industry leading RDS(on) and superior thermal performance

Infineon’s OptiMOS™ low-voltage power MOSFETs present an innovative and improved PQFN package concept with Source-Down technology. With this new package, the silicon is flipped upside down inside of the component. This leads to the source potential connected to the PCB over the thermal pad instead of the drain potential.

The OptiMOS™ power MOSFET 3.3x3.3mm Source-Down package is now available in 25V and 40V. A full portfolio, ranging from 25V up to 150V, will be released in 2021.

This new technology comes in two different footprint versions: a Source-Down version and a Source-Down Center-Gate version which is specifically optimized for parallelization. Compared to alternative solutions, Source-Down offers benefits like lower RDS(on) and improved thermal performance. Additionally, less active cooling and a more effective layout for thermal management is provided through Source-Down technology. The OptiMOS™ low-voltage power MOSFET family in PQFN 3.3x3.3 Source-Down targets drives, telecom, SMPS and server applications.

PQFN 3.3 x 3.3 Source-Down package

Key features

  • Low RDS(on) in a small package
  • Low gate charge
  • Super Logic Level (2.5 V) and Logic Level (4.5V) availability

Key benefits

  • Board space reduction
  • Reduction in switching and driver losses
  • Gate drive flexibility

Explore the 3D visualization of the innovative Infineon Source-Down packages!

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Infineon webinar Choosing the right MOSFET for your application

3D model innovative Source-Down package

Infineon photo of a 3D model Source DOwn PQFN
Videos

48V HSC converter

Infineon recently introduced the new Open Compute Accelerator Module (OAM) as an intermediate bus converter, a Hybrid Switch Capacitor (HSC) converter. This converter combines the benefits of switched capacitor converters and the high step down ratio capability of a magnetic device.

Tackling the power density challenge OptiMOS™ Source-Down

Our expert gives an introduction to the new breakthrough in MOSFET packaging: Source-Down. The new package concept boosts power density in 48 V conversion. Thermals are under control and it stays cool demonstrated by the underwater setup.

Something huge is coming from #Infineon!

Infineon, the market leader in power semiconductor manufacturing, drives innovation in power management further. Ushers a new industry benchmark in MOSFET packaging that supports system-level optimization. Stay tuned!

Expert talk on the groundbreaking OptiMOS™ Source-Down package concept

Infineon, the industry leader in power systems again made a step forward in innovation for its customers’ even greater convenience. Listen to our experts discussing how our system-level understanding and innovative spirit helps us to supply the market with the right components.

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