Silicon Carbide CoolSiC™ MOSFETs

Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers. Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.

Enhancing new materials to offer customers extended levels of performance

In comparison to traditional silicon (Si) based high voltage (>600V) switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.

Infineon’s unique 1200V CoolSiC™ MOSFET adds additional advantages. Superior gate oxide reliability enabled by state-of-the-art trench design, best in class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness. This is the revolution you can rely on.

All this results in a robust Silicon Carbide MOSFET, ideal for hard- and resonant-switching topologies like LLC and ZVS, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.

CoolSiC™ MOSFET first products in different housings

TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.

TO-247-4pin package contains an additional connection to the source (Kelvin connection) that is used as a reference potential for the gate driving voltage, thereby eliminating the effect of voltage drops over the source inductance. The result is even lower switching losses than for TO247-3pin version, especially at higher currents and higher switching frequencies. CoolSiC™ MOSFET Easy modules offer a very good thermal interface, a low stray inductance and robust design as well as PressFIT connections.

The SiC web forum provides you with a platform for exchanging ideas with the community, asking our Silicon Carbide experts for advice and for sharing your experience with CoolSiC™ MOSFET modules and discretes.

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Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.

> More about our EiceDRIVER™ ICs for Silicon Carbide MOSFETs

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