OptiMOS™ and StrongIRFET™ family selection guide

20 V - 300 V power MOSFETs enable innovation and performance in a variety of applications

link

About

OptiMOS™ power MOSFETs for broad switching frequency

OptiMOS™ power MOSFETs deliver best-in-class performance in combination with highest efficiency and power density. 

The combination of leading-edge MOSFET technology with innovative packages deliver ultimate performance results for your power solutions. Features include ultra-low RDS(on) as well as high efficiency and power density ideal for high switching frequency applications.

StrongIRFET™ power MOSFETs for switching frequency < 100 kHz

StrongIRFET™ power MOSFETs are designed for rugged industrial applications and are ideal for designs with a low switching frequency and those that require a high current carrying capability. The family features rugged silicon and a broad portfolio of packages to meet all your design requirements.

OptiMOS™ and StrongIRFET™ MOSFET package portfolio

Infineon has been making an impact in the MOSFET industry with innovation in MOSFET manufacturing techniques and processes as well as pioneering new packages to meet the changing demands of cutting-edge designs in various applications. OptiMOS™ and StrongIRFET™ technologies are available in different packages to address demands for high current carrying capability and significant space saving.

The broad portfolio enables footprint reduction, boosted current rating, and optimized thermal performance. While the surface mount leadless devices are enabled for footprint reduction, through-hole packages are characterized by a high-power rating.

Explore latest packages

OptiMOS™ power MOSFETs for broad switching frequency

OptiMOS™ power MOSFETs deliver best-in-class performance in combination with highest efficiency and power density. 

The combination of leading-edge MOSFET technology with innovative packages deliver ultimate performance results for your power solutions. Features include ultra-low RDS(on) as well as high efficiency and power density ideal for high switching frequency applications.

StrongIRFET™ power MOSFETs for switching frequency < 100 kHz

StrongIRFET™ power MOSFETs are designed for rugged industrial applications and are ideal for designs with a low switching frequency and those that require a high current carrying capability. The family features rugged silicon and a broad portfolio of packages to meet all your design requirements.

OptiMOS™ and StrongIRFET™ MOSFET package portfolio

Infineon has been making an impact in the MOSFET industry with innovation in MOSFET manufacturing techniques and processes as well as pioneering new packages to meet the changing demands of cutting-edge designs in various applications. OptiMOS™ and StrongIRFET™ technologies are available in different packages to address demands for high current carrying capability and significant space saving.

The broad portfolio enables footprint reduction, boosted current rating, and optimized thermal performance. While the surface mount leadless devices are enabled for footprint reduction, through-hole packages are characterized by a high-power rating.

Explore latest packages

Documents

Documents