OptiMOS™ 6 80 V

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry standard for high power density designs

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Overview

OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering including PQFN 3.3x3.3, SuperSO8, PQFN 5x6 Dual-Side Cooling, and PQFN 3.3x3.3 Source-Down. OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server ,and solar. The performance improvements of OptiMOS™ 6 80 V also demonstrate benefits in battery management systems (BMS).

Key Features

  • >24% less RDS(on) vs OptiMOS™ 5 in SSO8
  • >28% less RDS(on) vs released PQFN 3x3
  • Industry standard package portfolio
  • Normal level gate drive
  • Improved power, SOA, & avalanche current
  • 175°C rated
  • Industrial qualification

Products

About

How to choose the right MOSFET

OptiMOS™ 6  80 V is the latest power MOSFET technology completing the Infineon industrial portfolio together with OptiMOS™ 5 and OptiMOS™ 3.

These technologies are the perfect fit if you are looking for high performance applications, industry's best figure of merit and high efficiency and power density.

Drain to source resistance RDS(on)

RDS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower RDS(on) value yields:

  • reduction in conduction losses
  • less or avoided paralleling of parts, saving costs and PCB real estate leading to increased power density!
     

OptiMOS™ 6 80 V in SuperSO8 package achieves:

  • 24% lower on-state resistance compared to OptiMOS™ 5
     

 A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • increased power density
  • ~20% reduction in conduction losses compared to next best alternative

 

OptiMOS™ 6 80 V in PQFN 3.3x3.3 package achieves:

  • 29% lower on-state resistance compared to OptiMOS™ 5

 

A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • increased power density
  • ~30% reduction in conduction losses compared to OptiMOS™ 5
Total gate charge (Qg)

Total gate charge (Qg) is the amount of charge that needs to be supplied to the gate to turn on (drive) the MOSFET, for some specified conditions. A small value of Qg is highly desirable in high-switching frequency applications, since it directly impacts on the driving losses.

The gate-to-drain charge Qgd represents the part of gate charge associated with the Miller plateau extension, required to complete the drain voltage transition. For the same driving circuit, a lower Qgd means faster voltage transients, hence lower switching losses. This is of utmost importance in high-switching frequency, hard-switched SMPS, where switching losses play a significant role.

Compared with similar RDS(on) products, OptiMOS™ 6 80 V achieves ~40% improvement in Qg and in Qgd compared to OptiMOS™ 5.

Figure of merit (FOM)

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

Safe operating area (SOA)

The SOA is a diagram defined by the voltage and current conditions over which a MOSFET can be operated without incurring into permanent damage or degradation.

The comparison between SOAs for best-in-class OptiMOS™ 5 (1.9 mΩ) and OptiMOS™ 6 (1.5 mΩ) SuperSO8 products, highlights that new technology in 80 V shows significant improvement in the linear region of operation.

How to choose the right MOSFET

OptiMOS™ 6  80 V is the latest power MOSFET technology completing the Infineon industrial portfolio together with OptiMOS™ 5 and OptiMOS™ 3.

These technologies are the perfect fit if you are looking for high performance applications, industry's best figure of merit and high efficiency and power density.

Drain to source resistance RDS(on)

RDS(on) is one of the key parameters of a MOSFET and denotes the on-state resistance measured between drain and source terminals.

A lower RDS(on) value yields:

  • reduction in conduction losses
  • less or avoided paralleling of parts, saving costs and PCB real estate leading to increased power density!
     

OptiMOS™ 6 80 V in SuperSO8 package achieves:

  • 24% lower on-state resistance compared to OptiMOS™ 5
     

 A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • increased power density
  • ~20% reduction in conduction losses compared to next best alternative

 

OptiMOS™ 6 80 V in PQFN 3.3x3.3 package achieves:

  • 29% lower on-state resistance compared to OptiMOS™ 5

 

A low RDS(on) value such as in the new OptiMOS™ 6 80 V products leads to:

  • increased power density
  • ~30% reduction in conduction losses compared to OptiMOS™ 5

Total gate charge (Qg)

Total gate charge (Qg) is the amount of charge that needs to be supplied to the gate to turn on (drive) the MOSFET, for some specified conditions. A small value of Qg is highly desirable in high-switching frequency applications, since it directly impacts on the driving losses.

The gate-to-drain charge Qgd represents the part of gate charge associated with the Miller plateau extension, required to complete the drain voltage transition. For the same driving circuit, a lower Qgd means faster voltage transients, hence lower switching losses. This is of utmost importance in high-switching frequency, hard-switched SMPS, where switching losses play a significant role.

Compared with similar RDS(on) products, OptiMOS™ 6 80 V achieves ~40% improvement in Qg and in Qgd compared to OptiMOS™ 5.

Figure of merit (FOM)

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

Safe operating area (SOA)

The SOA is a diagram defined by the voltage and current conditions over which a MOSFET can be operated without incurring into permanent damage or degradation.

The comparison between SOAs for best-in-class OptiMOS™ 5 (1.9 mΩ) and OptiMOS™ 6 (1.5 mΩ) SuperSO8 products, highlights that new technology in 80 V shows significant improvement in the linear region of operation.

Documents

Documents

Design resources

Developer community

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