OptiMOS™ 6 120 V 

Fully optimized, 120 V power MOSFETs with best-in-class performance in a wide variety of package options

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Overview

Infineon's OptiMOS™ 6 power MOSFET family 120 V is suitable for both hard- and soft-switching applications, at high and low switching frequencies, and is available in both Normal and Logic levels. These can be used in various applications such as industrial power supplies, solar, power chargers, low-voltage drives, and power tools.

Key Features

  • Industry’s lowest RDS(on) in 120 V
  • Highest efficiency
  • High power density
  • High system reliability
  • Wide package selection

Products

About

OptiMOS™ 6 120 V advantages

The new OptiMOS™ 6 MOSFET 120 V shows advantages for a wide range of applications, due to impressive improvements in key parameters such as a 52% reduction in RDS(on), 64% reduction in figure of merit (FOM), and 49% reduction in reverse recovery charge (Qrr). The family offers the best balance between switching and conduction losses for various applications. OptiMOS™ 6 MOSFETs 120 V are available with industrial qualification and have a maximum junction temperature of 175°C for superior power handling and ruggedness.

OptiMOS™ 6 120 V portfolio

The OptiMOS™ 6 120 V power MOSFET portfolio is available in a wide selection of through-hole and SMD packages. Available packages include PQFN 3.3x3.3, SuperSO8 5x6, TO-Leadless (TOLL), and TO-Leaded top-side cooling (TOLT) with more packages coming soon. This allows you to combine the best silicon technology with highly reliable Infineon packages.

OptiMOS™ 6 120 V in USB PD applications

The new OptiMOS™ 6 120 V power MOSFET technology, available in Normal and Logic levels, addresses both hard- and soft-switched applications at high and low switching frequencies. In addition to synchronous rectification (SR) applications, it is also suitable in applications such as industrial power supplies, solar, power chargers (USB PD), low-voltage drives, and power tools. 

For additional information, see the application note: "New OptiMOS™ 6 120 V enables USB-PD EPR designs from 3.3 V to 48 V" linked below.

OptiMOS™ 6 120 V advantages

The new OptiMOS™ 6 MOSFET 120 V shows advantages for a wide range of applications, due to impressive improvements in key parameters such as a 52% reduction in RDS(on), 64% reduction in figure of merit (FOM), and 49% reduction in reverse recovery charge (Qrr). The family offers the best balance between switching and conduction losses for various applications. OptiMOS™ 6 MOSFETs 120 V are available with industrial qualification and have a maximum junction temperature of 175°C for superior power handling and ruggedness.

OptiMOS™ 6 120 V portfolio

The OptiMOS™ 6 120 V power MOSFET portfolio is available in a wide selection of through-hole and SMD packages. Available packages include PQFN 3.3x3.3, SuperSO8 5x6, TO-Leadless (TOLL), and TO-Leaded top-side cooling (TOLT) with more packages coming soon. This allows you to combine the best silicon technology with highly reliable Infineon packages.

OptiMOS™ 6 120 V in USB PD applications

The new OptiMOS™ 6 120 V power MOSFET technology, available in Normal and Logic levels, addresses both hard- and soft-switched applications at high and low switching frequencies. In addition to synchronous rectification (SR) applications, it is also suitable in applications such as industrial power supplies, solar, power chargers (USB PD), low-voltage drives, and power tools. 

For additional information, see the application note: "New OptiMOS™ 6 120 V enables USB-PD EPR designs from 3.3 V to 48 V" linked below.

Documents

Documents

Design resources

Developer community

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