OptiMOS™ 5 40 V and 60 V

Shrink your design and boost the efficiency

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Overview

AC-DC designers face the challenge of improving system efficiency and power density while reducing system costs. Infineon’s OptiMOS™ 5 power MOSFETs in 40 V and 60 V range feature 15 percent lower RDS(on) and 31 percent lower figure of merit (RDS(on) x Qg) compared to alternative devices, and are the perfect answer to these challenges.

Key Features

  • Highest system efficiency
  • Low switching and conduction losses
  • Very low-voltage overshoot
  • Available Tjmax: 150°C and 175°C
  • Less paralleling required
  • Increased power density

Products

About

OptiMOS™ 5 power MOSFETs in 40 V and 60 V

OptiMOS™ 5 power MOSFETs in 40 V and 60 V ranges include a wide variety of packages such as DPAK, D²PAK, D²PAK 7-pin, PQFN 2x2, PQFN 3.3x3.3, SuperSO8 5x6, TO-220, TO-220 FullPAK, TOLL, TOLG, and TOLT to meet your design and space requirements.

OptiMOS™ 5 power MOSFET 175°C: Enhanced temperature rating

OptiMOS™ 5 power MOSFETs offer the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.

Compared to lower-rated devices, the 175°C TJmax feature offers either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature. Furthermore, the device achieves 20 percent improvement in the safe operating area (SOA).

OptiMOS™ with monolithic integrated Schottky-like diode

A monolithic integrated Schottky-like diode in the 40 V SuperSO8 package (5x6 mm) leads to higher efficiency and a drastic reduction of voltage overshoot. Therefore, it reduces the need for a snubber circuit and saves engineering effort and cost.

OptiMOS™ 5 power MOSFETs in 40 V and 60 V

OptiMOS™ 5 power MOSFETs in 40 V and 60 V ranges include a wide variety of packages such as DPAK, D²PAK, D²PAK 7-pin, PQFN 2x2, PQFN 3.3x3.3, SuperSO8 5x6, TO-220, TO-220 FullPAK, TOLL, TOLG, and TOLT to meet your design and space requirements.

OptiMOS™ 5 power MOSFET 175°C: Enhanced temperature rating

OptiMOS™ 5 power MOSFETs offer the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.

Compared to lower-rated devices, the 175°C TJmax feature offers either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature. Furthermore, the device achieves 20 percent improvement in the safe operating area (SOA).

OptiMOS™ with monolithic integrated Schottky-like diode

A monolithic integrated Schottky-like diode in the 40 V SuperSO8 package (5x6 mm) leads to higher efficiency and a drastic reduction of voltage overshoot. Therefore, it reduces the need for a snubber circuit and saves engineering effort and cost.

Documents

Documents

Design resources

Developer community

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