OptiMOS™ 6 60 V

OptiMOS™ 6 60 V - Benchmark technology for efficiency, soft-switching topologies, and compact thermal designs.

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Overview

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Key Features

  • >37% less RDS(on) vs OptiMOS™ 5 in SSO8
  • High performance silicon technology
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification
  • Ideal for soft-switching applications

Products

About

How to choose the right MOSFET
  • The OptiMOS™ 6 60 V family sets a new benchmark in power MOSFET performance, delivering unparalleled efficiency and reliability for modern soft-switching topologies. With a >30% improvement in RDS(on) over earlier generations like OptiMOS™ 5, it minimizes conduction losses and enhances overall system performance.
  • OptiMOS™ 6 features advanced packaging solutions, including PQFN 3.3 x 3.3 source-down with dual-side cooling, designed to address a wide range of applications, including:
  • Switched-mode power supplies (SMPS) for telecom and server applications.
  • Low frequency motor drives requiring low conduction and thermal losses.
  • BMS applications
  • This family is optimized for both normal-level and logic-level drive requirements, providing design flexibility to suit diverse customer needs while achieving best-in-class performance.
Drain to source resistance RDS(on)

OptiMOS™ 6 60 V delivers industry-leading low on-state resistance (RDS(on)), achieving up to a 37% improvement compared to OptiMOS™ 5 and competing alternatives.

This translates to:

  • Reduced power losses: Ideal for applications demanding higher efficiency.
  • Increased power density: Supports compact designs while eliminating or reducing the need for component paralleling.
  • Outstanding thermal reliability: Available in compact, thermally optimized package options like PQFN 3.3 x 3.3 Source-Down and SuperSO8 DSC.

For designers, these features translate into systems with higher efficiency, better thermal management, and lesser system costs through reduced paralleling, enabling robust solutions for both high-performance and cost-sensitive applications.

Figure of merit (FOM)

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

The OptiMOS™ 6 60 V family delivers exceptional Figure of Merit (FOM) performance, achieving industry-leading levels of efficiency and switching performance. With a focus on minimizing both on-state resistance (RDS(on)) and gate charge (Qg), the FOM (RDS(on) x Qg) is significantly improved, ensuring reduced power losses and higher overall system efficiency.

How to choose the right MOSFET
  • The OptiMOS™ 6 60 V family sets a new benchmark in power MOSFET performance, delivering unparalleled efficiency and reliability for modern soft-switching topologies. With a >30% improvement in RDS(on) over earlier generations like OptiMOS™ 5, it minimizes conduction losses and enhances overall system performance.
  • OptiMOS™ 6 features advanced packaging solutions, including PQFN 3.3 x 3.3 source-down with dual-side cooling, designed to address a wide range of applications, including:
  • Switched-mode power supplies (SMPS) for telecom and server applications.
  • Low frequency motor drives requiring low conduction and thermal losses.
  • BMS applications
  • This family is optimized for both normal-level and logic-level drive requirements, providing design flexibility to suit diverse customer needs while achieving best-in-class performance.

Drain to source resistance RDS(on)

OptiMOS™ 6 60 V delivers industry-leading low on-state resistance (RDS(on)), achieving up to a 37% improvement compared to OptiMOS™ 5 and competing alternatives.

This translates to:

  • Reduced power losses: Ideal for applications demanding higher efficiency.
  • Increased power density: Supports compact designs while eliminating or reducing the need for component paralleling.
  • Outstanding thermal reliability: Available in compact, thermally optimized package options like PQFN 3.3 x 3.3 Source-Down and SuperSO8 DSC.

For designers, these features translate into systems with higher efficiency, better thermal management, and lesser system costs through reduced paralleling, enabling robust solutions for both high-performance and cost-sensitive applications.

Figure of merit (FOM)

The MOSFET “figure of merit” (FOM) is a performance indicator of a technology which accounts for both conduction and switching losses. FOM is calculated as on-resistance (RDS(on)) times total gate charge (Qg) and is usually expressed in mΩ x nC.

The OptiMOS™ 6 60 V family delivers exceptional Figure of Merit (FOM) performance, achieving industry-leading levels of efficiency and switching performance. With a focus on minimizing both on-state resistance (RDS(on)) and gate charge (Qg), the FOM (RDS(on) x Qg) is significantly improved, ensuring reduced power losses and higher overall system efficiency.

Design Resources Component

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