Active and preferred
RoHS Compliant
Lead-free

S25FL064LABMFA010

Data Sheet
package
software
ea.
in stock

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S25FL064LABMFA010
S25FL064LABMFA010
ea.
Data Sheet

Product details

  • Density
    64 MBit
  • Family
    FL-L
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / 54
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2032
  • Qualification
    Automotive
Recommended
OPN
S25FL064LABMFA010
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (002-15548)
Packing Size 280
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (002-15548)
Packing Size 280
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL064LABMFA010 is a 64 Mb automotive-grade SPI NOR flash memory using 65-nm floating gate technology, qualified to AEC-Q100 Grade 1 (–40°C to +125°C). It supports single, dual, and quad I/O SPI at up to 108 MHz SDR or 54 MHz DDR, enabling read speeds up to 54 MBps. With a 256-byte page buffer, uniform 4 KB/32 KB/64 KB erase, advanced security, and 2.7 V to 3.6 V operation, it is ideal for code storage and XIP in automotive and industrial systems.

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Benefits

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }