not for new design

IRHLNM7S3214SCS

This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
Data Sheet
package

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IRHLNM7S3214SCS
IRHLNM7S3214SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    1
  • ESD Class
    Class 1B
  • Generation
    R7
  • ID (@100°C) max
    2 A
  • ID (@25°C) max
    3.2 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.2
  • Polarity
    N
  • QG
    13 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    1100 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    250 V
  • VF max
    1.2 V
OPN
Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status not for new design
Infineon Package
C-CCN-3
Package Name SMD-0.2 Metal Lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
IRHLNM7S3214SCS N-channel MOSFET in SMD-0.2 package is a rad hard, 100V, 6.5A single device with electrical performance up to 100krad(Si) TID. These R7 logic level power MOSFETs offer immunity to single event gate rupture and single event burnout while maintaining acceptable voltage limits. This MOSFET is an ideal simple solution for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

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