Active and preferred
RoHS Compliant
Lead-free

IMLT65R060M2H

CoolSiC™ MOSFET 650 V G2 in TOLT package
Data Sheet
package
ea.
in stock

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IMLT65R060M2H
IMLT65R060M2H
ea.
Data Sheet

Product details

  • ID (@25°C) max
    40 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    TOLT
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    60 mΩ
  • RthJC max
    0.75 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    650 V
Recommended
OPN
IMLT65R060M2HXTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-16
Package Name TOLT
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-HDSOP-16
Package Name TOLT
Packing Size 1800
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.

Features

  • Excellent figures of merit (FOMs)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS(off)=0)
  • Lower thermal resistance
  • Improved package interconnect with .XT
  • Top-side cooling

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Simplifies assembly and cooling
  • Water cooling "ready"
  • Allows designs without fan or heatsink
  • Lower stray inductances
  • Better gate control

Documents

Documents

Design resources

Partner solutions

Developer community

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