NEW
Active and preferred
RoHS Compliant
Lead-free

IMDQ75R004M2H

NEW
CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 4 mΩ
Data Sheet
package
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IMDQ75R004M2H
IMDQ75R004M2H
Data Sheet

Product details

  • ID (@25°C) max
    357 A
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    PG-HDSOP-22
  • Polarity
    N
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    3.5 mΩ
  • RthJC max
    0.1 K/W
  • Technology
    CoolSiC™ G2
  • VDS max
    750 V
Recommended
OPN
IMDQ75R004M2HXTMA1
Product Status active and preferred
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-HDSOP-22
Package Name Q-DPAK
Packing Size 750
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 4 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers.

Features

  • 100% avalanche tested
  • Best‑in‑class RDS(on) x Qfr
  • Excellent RDS(on) x Qoss & RDS(on) x QG
  • Unique low Crss/Ciss & high VGS(th)
  • Improved package interconnect with .XT
  • Driver source pin available
  • Best-in-class RDS(on) in SMD device

 

Benefits

  • Enhanced robustness and reliability
  • Superior efficiency in hard switching
  • Higher switching frequency
  • Robustness against parasitic turn on
  • Best‑in‑class thermal dissipation
  • Reduced switching losses

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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