IHW25N120R2

Data Sheet

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IHW25N120R2
IHW25N120R2
Data Sheet

Product details

  • Eoff (Hard Switching)
    2.54 mJ
  • IC (@ 25° ) max
    50 A
  • IC (@ 100°) max
    25 A
  • ICpuls max
    75 A
  • IF max
    50 A
  • IFpuls max
    75 A
  • Package
    TO-247-3
  • Ptot max
    365 W
  • QGate
    60.7 nC
  • Switching Frequency
    8 kHz to 60 kHz
  • td(off)
    324 ns
  • Technology
    IGBT RC Soft Switching
  • tf
    55.8 ns
  • VCE(sat)
    1.6 V
  • VCE max
    1200 V
  • VF
    1.5 V
  • VGE(th)
    5.8 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The 2nd generation of reverse conducting 1200 V, 25 A TRENCHSTOP™ RC-IGBT3 and Fieldstop technology with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

Features

  • Best-in-class VCEsat & Vf
  • Lowest switching losses
  • Stable temperature behavior
  • Soft current turn-off waveforms
  • High breakthrough voltage
  • Resistance to current spikes (SOA)

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Documents

Design resources

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