IDC73D120T6H

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IDC73D120T6H
IDC73D120T6H

Product details

  • I(FSM) max
    300 A
  • IF max
    150 A
  • IR max
    26 µA
  • Technology
    Emitter Controlled Diode 4 High Power
  • VDS max
    1200 V
  • VF
    1.9 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

Features

  • 1200 V Emitter Controlled Diode 4
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }