IDC52D120Y8DA
Active and preferred
RoHS Compliant

IDC52D120Y8DA

Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology

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IDC52D120Y8DA
IDC52D120Y8DA


Product details

  • IFn
    230 A
  • Technology
    EDT3
  • VRRM
    1200 V

OPN
Product Status active and preferred
Infineon Package --
Package Name N/A
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level N/A
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes

Product Status
Active
Infineon Package --
Package Name -
Packing Size 1
Packing Type HORIZONTAL FRAME SHIPPER
Moisture Level -
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Our latest EDT3 devices in the 1200 V voltage class deliver unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.

Features

  • 1200V Emitter Controlled Diode technology
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
  • Solderable / sinterable front side pads
  • 185°C maximum junction temperature

Benefits

  • Ideal for automotive requirements
  • Customized development (on demand)
  • Up to 25% higher output current density
  • Decreased losses and increased max. Tvj
  • Cost benefit due to module shrink
  • Low costs per Ampere on system level
  • Less parallelization effort and costs
  • High reliability and quality
  • Drop-in replacement
  • Simple gate drive design

Applications

Documents

Design resources

Developer community