NEW
Active and preferred
RoHS Compliant

IAUCN04S7L023H

NEW
40 V, N-Ch, 2.34 mΩ, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS™-7
ea.
in stock

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IAUCN04S7L023H
IAUCN04S7L023H
ea.

Product details

  • ID (@25°C) max
    100 A
  • Launch year
    2025
  • Operating Temperature
    -55 °C to 175 °C
  • Planned to be available until at least
    2038
  • Polarity
    N
  • QG (typ @10V)
    29 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    2.34 mΩ
  • Technology
    OptiMOS™-7
  • VDS max
    40 V
  • VGS(th)
    1.5 V
OPN
IAUCN04S7L023HATMA1
Product Status active and preferred
Infineon Package
Package Name Dual SSO8 HB
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name Dual SSO8 HB
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The new integrated SSO8 half-bridge (5x6mm²) is the innovative and cost-efficient package solution for motor drive & body applications. The integrated half-bridge provides the ideal solution for optimized routing in bridge applications and helps reduce the PCB area considerably. The new OptiMOS™-7 40V portfolio provides a wide RDS(on) range from 2.3 mΩ to 5.4 mΩ combined with an increased current rating of up to 100A.

Features

  • 5x6 mm² H-bridge footprint
  • Up to 100A high current capability
  • 2-channel H-bridge configuration
  • Leading-edge OptiMOS™-7 40V
  • RDS(on) range: 2.3 mΩ – 5.4 mΩ
  • Cu-clip for low RDS(on) & low inductance
  • High avalanche capability
  • SOA ruggedness

Benefits

  • High power & current density in H-bridge
  • Optimized layout & form factor
  • High thermal capacity lead-frame
  • Reduced conduction losses
  • Optimized switching behavior
  • JEDEC industry std. package
  • Automotive robust package & IFX quality

Documents

Design resources

Developer community

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