CY7C1514KV18-300BZXI
Active and preferred
RoHS Compliant
Lead-free

CY7C1514KV18-300BZXI

package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY7C1514KV18-300BZXI
CY7C1514KV18-300BZXI

Product details

  • Architecture
    QDR-II
  • Bank Switching
    N
  • Burst Length (Words)
    2
  • Data Width
    x 36
  • Density
    72 MBit
  • ECC
    N
  • Family
    QDR-II
  • Frequency
    300 MHz
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • On-Die Termination
    N
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.7 V to 1.9 V
  • Organization (X x Y)
    2Mb x 36
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Read Latency (Cycles)
    1.5
Recommended
OPN
CY7C1514KV18-300BZXI
Product Status active and preferred
Infineon Package
PG-BGA-165
Package Name FBGA-165 (51-85180)
Packing Size 1360
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-165
Package Name FBGA-165 (51-85180)
Packing Size 1360
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C1514KV18-300BZXI is a 1.8 V QDR II synchronous pipelined SRAM organized as 2M × 36 (72 Mbit). It uses separate read and write ports with DDR interfaces and a two-word burst, eliminating bus turnaround and enabling concurrent transactions. Rated for 300 MHz clock operation, it supports single clock mode, echo clocks (CQ/CQ), and 1.5-cycle read latency with DOFF HIGH (1-cycle QDR I mode with DOFF LOW).

Features

  • 72-Mbit QDR II SRAM architecture
  • Separate read/write data ports
  • Concurrent read and write transactions
  • Two-word burst on all accesses
  • DDR I/O, 350 MHz (700 MHz data)
  • 1.5-cycle read latency (DOFF=HIGH)
  • 1-cycle read latency (DOFF=LOW)
  • Input clocks K/K and output C/C
  • Echo clocks CQ/CQ for data capture
  • Core VDD 1.7-1.9 V (nom 1.8 V)
  • VDDQ 1.4 V to VDD, VREF range
  • JTAG IEEE 1149.1 boundary scan

Benefits

  • High bandwidth for fast networking
  • No bus turnaround delays
  • Parallel R/W boosts throughput
  • Two-word bursts cut command load
  • DDR at 700 MHz speeds transfers
  • Low-latency reads for tight timing
  • DOFF selects latency vs pipeline
  • Separate clocks ease timing closure
  • Echo clocks simplify PCB capture
  • 1.8 V core helps reduce power
  • HSTL levels fit high-speed links
  • JTAG speeds board test and debug

Applications

Documents

Design resources

Partner solutions

Developer community