CY7C1069GN30-10ZSXIT
Active and preferred
RoHS Compliant
Lead-free

CY7C1069GN30-10ZSXIT

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CY7C1069GN30-10ZSXIT
CY7C1069GN30-10ZSXIT

Product details

  • Density
    16 MBit
  • Family
    FAST SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2.2 V to 3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    2M x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    10 ns
OPN
CY7C1069GN30-10ZSXIT
Product Status active and preferred
Infineon Package
Package Name TSOP-II-54 (51-85160)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name TSOP-II-54 (51-85160)
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
CY7C1069GN30-10ZSXIT is a 16-Mbit (2M × 8) fast asynchronous CMOS SRAM in a Pb-free 54-pin TSOP II, supplied at 2.2 V to 3.6 V for -40°C to +85°C industrial operation. It delivers 10 ns access time and up to 110 mA operating current at fMAX, with automatic power-down when deselected. Dual chip enables, OE, and WE support simple read/write control and easy memory expansion in embedded systems.

Features

  • 16-Mbit (2M × 8) SRAM
  • 10 ns address access (tAA)
  • 10 ns read cycle time (tRC)
  • 10 ns write cycle time (tWC)
  • 5 ns OE to data valid (tDOE)
  • 2.2 V to 3.6 V VCC operation
  • 90 mA typ ICC at 100 MHz
  • Automatic power-down deselect
  • High-Z outputs when deselected
  • TTL-compatible inputs and outputs
  • 1.0 V data retention (VDR)
  • 21-bit addr (A0–A20), 8-bit I/O

Benefits

  • 10 ns access supports fast reads
  • 10 ns cycles raise data throughput
  • 5 ns OE access cuts read latency
  • 2.2–3.6 V fits 3.3 V rails
  • 90 mA typ helps power budgeting
  • Auto power-down reduces idle power
  • High-Z enables shared bus systems
  • TTL I/O eases logic interfacing
  • 1.0 V retention preserves contents
  • Retention mode lowers backup power
  • 21-bit address maps 2M locations
  • 8-bit I/O matches byte-wide MCUs

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Documents

Design resources

Developer community