CY62136EV30LL-45ZSXI
Active and preferred
RoHS Compliant
Lead-free

CY62136EV30LL-45ZSXI

Datasheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62136EV30LL-45ZSXI
CY62136EV30LL-45ZSXI
ea.
Datasheet

Product details

  • Density
    2 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 16
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    45 ns
Recommended
OPN
CY62136EV30LL-45ZSXI
Product Status active and preferred
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TSOP-44
Package Name TSOP-II-44 (51-85087)
Packing Size 675
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
CY62136EV30LL-45ZSXI is a 2-Mbit (128K × 16) CMOS static RAM with 45 ns access for fast random data storage in portable and embedded systems. It operates from 2.2 V to 3.6 V over -40°C to +85°C, with ICC up to 20 mA at fmax and automatic CE power-down standby of 1 µA typical (7 µA max). I/Os are high-Z when deselected or during write. The -45ZSXI option is a Pb-free 44-pin TSOP II.

Features

  • 128K 6 16 CMOS SRAM
  • 45 ns read/write cycle time
  • VCC operating 2.20 V to 3.60 V
  • 1 cA typ standby current
  • 7 cA max standby current
  • 2 mA typ at 1 MHz active current
  • Automatic CE power-down current
  • 16-bit I/O with BLE/BHE byte enables
  • Tri-state outputs via CE/OE control
  • Data retention at VCC = 1.0 V
  • ICCDR 3 cA max at VCC = 1.0 V
  • OE LOW to data valid 22 ns max

Benefits

  • 45 ns access cuts wait states
  • 2.2 3.6 V fits 3 V rails
  • 1 cA standby extends battery life
  • 7 cA max helps low-power design
  • 2 mA at 1 MHz reduces energy use
  • CE power-down saves idle power
  • Byte enables support partial writes
  • Tri-state enables bus sharing
  • 1.0 V retention preserves contents
  • Low ICCDR reduces backup current
  • 22 ns OE speeds read enable timing
  • 16-bit bus boosts data throughput

Applications

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }