About Siltectra

SILTECTRA GmbH was founded as a start-up in 2010 and has been operating on the market as an independent subsidiary of Infineon Technologies AG since November 2018. As an R&D location and pilot line, SILTECTRA has extensive expertise and a large patent portfolio with a focus on laser-based split processes for crystalline materials, including semiconductor material SiC. In addition to development and production, all key commercial areas are located at the company headquarters in Dresden.

The new location, which was built in the south of Dresden in 2023, is certified according to ISO9001 and operates in modern clean room and laboratory areas according to the ISO7 standard.

What is cold split technology?

The SILTECTRA™ cold split technology splits crystalline materials with minimal loss of material compared to common sawing technologies. SILTECTRA™ technology can also be applied with the semiconductor material Silicon Carbide (SiC), for which rapidly rising demand is expected in the coming years. SiC products, such as Infineon CoolSiC™ devices are already used today in very efficient and compact solar inverters. In the future, SiC will play a more and more important role in electro-mobility.

The laser-based technique employs a chemical-physical process that uses thermal stress to generate a force that splits the material with exquisite precision along the desired plane, and produces virtually no kerf loss. The “no kerf loss” capability is unique to cold split and delivers breakthrough advantages. First, it extracts more wafers per boule than conventional wafering technologies. This drives up output. Second, it dramatically reduces consumables costs.

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Impressum Siltectra GmbH

Managing Directors
Dr. Peter Friedrichs
Torsten Herrich

Address
Siltectra GmbH
Pforzheimer Straße 7a
01189 Dresden
Germany

T +49 (351) 889 56-130
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Commercial Register at Amtsgericht Dresden HRB 28951
Taxpayer Identification Number DE812655055