Active and preferred
RoHS Compliant
Lead-free

S29GL064S70BHI033

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S29GL064S70BHI033
S29GL064S70BHI033

Product details

  • Density
    64 MBit
  • Family
    GL-S
  • Initial Access Time
    70 ns
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Page Access Time
    15 ns
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
OPN
S29GL064S70BHI033
Product Status active and preferred
Infineon Package
Package Name VFBGA-48 (002-19063)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name VFBGA-48 (002-19063)
Packing Size 2500
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S29GL064S70BHI033 is a 64 Mb (8 MB) parallel NOR flash memory based on 65-nm MIRRORBIT™ technology, with 70 ns access time and 16-bit or 8-/16-bit configurable data bus. Operating from 2.7 V to 3.6 V, it supports AEC-Q100 Grade 2 (–40°C to +105°C) for automotive use. Features include top boot sector architecture, advanced sector/password protection, and 100,000 erase cycles per sector. Ideal for automotive, industrial, and embedded applications requiring high reliability.

Features

  • 3.0 V single power supply operation
  • 65-nm MIRRORBIT™ process technology
  • 16-bit or 8/16-bit data bus options
  • 70 ns access time, 15 ns page read time
  • 8-word/16-byte page read buffer
  • 128-word/256-byte write buffer
  • Internal hardware ECC, single bit correction
  • Advanced sector protection
  • 100,000 erase cycles per sector min
  • 20-year data retention typical
  • Automatic sleep and standby modes
  • JEDEC CFI and command set compatible

Benefits

  • 3.0 V simplifies power design
  • 65-nm tech ensures high reliability
  • Flexible bus supports legacy and new designs
  • Fast access boosts system performance
  • Page buffer enables quick data reads
  • Write buffer speeds up programming
  • ECC improves data integrity
  • Multi-level protection enhances security
  • High endurance lowers maintenance cost
  • Long retention secures critical data
  • Low-power modes extend battery life
  • JEDEC compatibility eases integration

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }