Active
RoHS Compliant
Lead-free

S26KS256SDGBHI030

Data Sheet
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S26KS256SDGBHI030
S26KS256SDGBHI030
Data Sheet

Product details

  • Bus Width
    x8
  • Density
    256 MBit
  • Family
    KS-S
  • Initial Access Time
    96 ns
  • Interface Bandwidth
    266 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    - / 133
  • Interfaces
    HYPERBUS
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    1.8 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
  • Technology
    HYPERFLASH
Recommended
OPN
S26KS256SDGBHI030
Product Status active
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
PG-BGA-24
Package Name FBGA-24 (002-15550)
Packing Size 1690
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
The S26KS256SDGBHI030 is a 256 Mb automotive-grade HYPERFLASH™ NOR memory with HYPERBUS™ DDR interface, supporting up to 166 MHz at 1.8 V and 100 MHz at 3.0 V. It delivers up to 333 MBps sustained read throughput and 96 ns initial access time. ECC, CRC, sector protection, and deep power-down (8 µA typical) enhance reliability. With 100,000 program/erase cycles and –40°C to +125°C operation (AEC-Q100 Grade 1), it is ISO/TS16949 certified for automotive and industrial use.

Features

  • 8-bit data bus
  • HYPERBUS™ interface
  • Up to 333 MBps sustained read throughput
  • DDR: two data transfers per clock
  • 166 MHz clock rate at 1.8 V
  • 100 MHz clock rate at 3.0 V
  • 96 ns initial random read access time
  • Configurable burst lengths: 16/32/64 bytes
  • Low power modes: standby 25 µA, deep
  • ECC: 1-bit correction, 2-bit detection
  • Hardware CRC calculation
  • Secure silicon region (1024-byte OTP)

Benefits

  • Fast data access for high-performance systems
  • Flexible interface supports diverse designs
  • High-speed DDR improves throughput
  • Multiple burst lengths optimize transfers
  • Low power modes extend battery life
  • ECC ensures data integrity
  • CRC detects transmission errors
  • Secure region enables device authentication
  • Quick random access reduces latency
  • 8-bit bus simplifies integration
  • Configurable output drive for signal tuning
  • Reliable operation in harsh environments

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