S25FL127SABMFB103

S25FL127SABMFB103

Datasheet
software

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

S25FL127SABMFB103
S25FL127SABMFB103
Datasheet


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S25FL127SABMFB103 is a 128 Mb (16 MB) flash memory device with SPI multi-I/O interface and 3.0 V operation. MIRRORBIT™ technology and Eclipse architecture enhance program and erase performance, supporting up to 54 MBps quad read rates. Hybrid 4-KB/64-KB or uniform 256-KB sector erase options, extended addressing, robust data protection, and operation from -40°C to +125°C with AEC-Q100 automotive grade make it ideal for embedded code shadowing and data storage.

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

Applications

Documents

Design resources

Partner solutions

Developer community