Active and preferred
RoHS Compliant
Lead-free

S25FL064LABNFI011

Data Sheet
package
software
ea.
in stock

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S25FL064LABNFI011
S25FL064LABNFI011
ea.
Data Sheet

Product details

  • Density
    64 MBit
  • Family
    FL-L
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / 54
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2032
  • Qualification
    Industrial
Recommended
OPN
S25FL064LABNFI011
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18755)
Packing Size 495
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18755)
Packing Size 495
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL064LABNFI011 is a 64 Mb (8 MB) automotive-grade SPI NOR flash memory with 3.0 V supply, supporting single, dual, and quad SPI, QPI, and DDR read modes. It achieves up to 108 MHz SDR and 54 MHz DDR, with quad read throughput of 54 MBps. The device features robust data protection, four 256-byte security regions, and password protection. Operating from -40°C to +105°C (AEC-Q100 Grade 2), it is ideal for high-reliability automotive and industrial uses.

Features

  • SPI interface with single, dual, quad I/O
  • Supports DDR and QPI modes
  • 256-byte page programming buffer
  • Uniform 4 KB, 32 KB, 64 KB, and chip erase
  • 100,000 program-erase cycles minimum
  • 20 year data retention minimum
  • Security regions with individual lock bits
  • Deep Power Down mode for data protection
  • 2.7 V to 3.6 V supply voltage
  • Input signal overshoot tolerance ±1.0 V

Benefits

  • Flexible I/O options enable fast data
  • DDR/QPI boost read and write speeds
  • Large buffer allows efficient programming
  • Multiple erase sizes fit varied applications
  • High endurance for long-term reliability
  • Data remains safe for up to 20 years
  • Security regions prevent unauthorized access
  • Deep Power Down blocks unwanted writes
  • Operates in standard 3 V systems
  • Handles transient voltage spikes safely

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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