JANSR2N7661U3CE
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JANSR2N7661U3CE

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JANSR2N7661U3CE
JANSR2N7661U3CE
Datasheet

Product details

  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R9
  • ID (@25°C) max
    -15 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-0.5e
  • Polarity
    P
  • QG
    49 nC
  • QPL Part Number
    2N7661U3CE
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    0.175 Ω
  • TID max
    100 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
JANSR2N7661U3CE P-channel MOSFET is rad hard, with -200 V and -15 A, in a single SMD-0.5e enhanced package with a ceramic lid and electrical performance up to 100 krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Features

  • SEE hardened
  • Low RDS(on)
  • Rugged SOA
  • Improved Avalanche Energy
  • Simple drive requirements
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • Surface mount
Documents

Design resources

Partner solutions

Developer community

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