IRF1010EZS

IRF1010EZS

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IRF1010EZS
IRF1010EZS


Product details

  • Budgetary Price €/1k
    0.51
  • ID (@25°C) max
    84 A
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    D2PAK (TO-263)
  • Polarity
    N
  • Ptot max
    140 W
  • Qgd
    21 nC
  • QG (typ @10V)
    58 nC
  • RDS (on) (@10V) max
    8.5 mΩ
  • RthJC max
    1.11 K/W
  • Tj max
    175 °C
  • VDS max
    60 V
  • VGS(th) range
    2 V to 4 V
  • VGS(th)
    3 V
  • VGS max
    20 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant

Applications

Documents

Design resources

Developer community