FF900R12ME7W_B11
Active and preferred
RoHS Compliant

FF900R12ME7W_B11

1200 V, 900 A half-bridge IGBT module

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FF900R12ME7W_B11
FF900R12ME7W_B11


Product details

  • Configuration
    half-bridge
  • Dimensions (width)
    62 mm
  • Dimensions (length)
    152 mm
  • Features
    Wave structure on the base plate, PressFIT
  • Housing
    EconoDUAL™ 3
  • IC(nom) / IF(nom)
    900 A
  • IC max
    900 A
  • Qualification
    Industrial
  • Technology
    IGBT7 - E7
  • VCE(sat) (Tvj=25°C typ)
    1.5 V
  • VCES / VRRM
    1200 V
  • VF (Tvj=25°C typ)
    1.8 V
  • Voltage Class max
    1200 V

OPN
FF900R12ME7WB11BPSA1
Product Status active and preferred
Infineon Package AG-ECONOD
Package Name N/A
Packing Size 6
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
HU
Country of Diffusion (CoD)
AT,MY
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package AG-ECONOD
Package Name -
Packing Size 6
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
HU
Country of Diffusion (CoD)
AT,MY
EconoDUAL™ 3 1200 V, 900 A half-bridge TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, PressFIT contact technology and wave structure on the base plate.

Features

  • Wave structure on the baseplate
  • Highest power density
  • Best-in-class VCEsat
  • Tvj op = 175°C overload
  • Improved terminals
  • PressFIT control pins
  • Screw power terminals
  • Integrated NTC temperature sensor
  • Isolated base plate
  • Compact and robust design
  • Molded terminals
Documents

Design resources

Developer community