CY62177EV18LL-70BAXI
Active and preferred
RoHS Compliant
Lead-free

CY62177EV18LL-70BAXI

ea.
in stock

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CY62177EV18LL-70BAXI
CY62177EV18LL-70BAXI
ea.


Product details

  • Density
    32 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Ag/Cu
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    1.65 V to 2.25 V
  • Operating Voltage (VCCQ) max
    2.25 V
  • Organization (X x Y)
    2M x 16
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    70 ns

OPN
CY62177EV18LL-70BAXI
Product Status active and preferred
Infineon Package
Package Name FBGA-48 (51-85191)
Packing Size 210
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name FBGA-48 (51-85191)
Packing Size 210
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62177EV18LL-70BAXI is a 32-Mbit CMOS SRAM organized as 2 M × 16 or 4 M × 8 for asynchronous read/write buffering. It operates from 1.65 V to 2.25 V over -40°C to +85°C with 70 ns access. Active current is 4.5 mA typ at 1 MHz (5.5 mA max), and standby is 3 µA typ (25 µA max) using automatic CE power-down. Data retention is supported at 1.0 V. Packaged in 48-ball Pb-free FBGA for space-limited designs.

Features

  • 32-Mbit SRAM, 2M×16 or 4M×8
  • 70 ns read/write cycle time
  • VCC 1.65 V to 2.25 V operation
  • ISB2 standby current 3 µA typ
  • ISB2 standby current 25 µA max
  • ICC 4.5 mA typ at 1 MHz
  • ICC 45 mA max at fMax
  • OE/CE tri-state outputs (High-Z)
  • Byte enables BLE/BHE per 8-bit
  • tDOE 35 ns OE to data valid

Benefits

  • Fits 16-bit or 8-bit bus designs
  • 70 ns access boosts throughput
  • Runs from low-voltage rails
  • µA standby extends battery life
  • Low max standby cuts sleep power
  • Low active current reduces heat
  • Supports higher-speed bus cycles
  • High-Z outputs ease bus sharing
  • Byte writes cut write bandwidth
  • Fast OE read enables quick fetch

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