CY62148EV30LL-45BVIT
Active and preferred

CY62148EV30LL-45BVIT

Datasheet
package

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62148EV30LL-45BVIT
CY62148EV30LL-45BVIT
Datasheet


Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Sn/Pb
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    512K x 8
  • Peak Reflow Temp
    220 °C
  • Qualification
    Industrial
  • Speed
    45 ns

Recommended
OPN
CY62148EV30LL-45BVIT
Product Status active and preferred
Infineon Package
P -VFBGA-36
Package Name VFBGA-36 (51-85149)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant No
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
P -VFBGA-36
Package Name VFBGA-36 (51-85149)
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TH
Country of Diffusion (CoD)
US
CY62148EV30LL-45BVIT is a 4-Mbit (512K × 8) CMOS asynchronous SRAM with 45 ns access for low-power portable and embedded designs. It operates from 2.2 V to 3.6 V over –40°C to +85°C, with typical ICC 3.5 mA at 1 MHz (20 mA max at fmax) and standby 2.5 µA (7 µA max). CE/OE/WE control, automatic power-down, and high-Z I/O enable simple bus sharing and memory expansion in 36-ball VFBGA.

Features

  • 4-Mbit SRAM (512K × 8)
  • 2.2 V to 3.6 V supply
  • 45 ns read cycle time (tRC)
  • 22 ns OE LOW to data valid
  • Auto power-down when CE HIGH
  • Standby current 2.5 µA typ
  • Standby current 7 µA max
  • Active current 3.5 mA at 1 MHz
  • Data retention at VCC = 1.5 V
  • Data retention current 8.8 µA max
  • I/O high-Z when CE/OE HIGH
  • 10 pF max input/output capacitance

Benefits

  • Fast reads reduce CPU wait states
  • Wide VCC fits 3.3 V designs
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current saves energy
  • 1.5 V retention preserves data
  • High-Z outputs ease bus sharing
  • Low I/O caps support fast edges
  • Quick OE access boosts throughput
  • Simple CE/OE control expands memory
  • Lower heat from low supply current
  • Predictable timings simplify design

Applications

Documents

Design resources

Partner solutions

Developer community