CY62148ELL-55SXI
Active and preferred
RoHS Compliant
Lead-free

CY62148ELL-55SXI

ea.
in stock

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CY62148ELL-55SXI
CY62148ELL-55SXI
ea.


Product details

  • Density
    4 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    5.5 V
  • Operating Voltage range
    4.5 V to 5.5 V
  • Organization (X x Y)
    512K x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    See roadmap
  • Qualification
    Industrial
  • Speed
    55 ns

OPN
CY62148ELL-55SXI
Product Status active and preferred
Infineon Package
Package Name SOIC-32 (51-85081)
Packing Size 500
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name SOIC-32 (51-85081)
Packing Size 500
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62148ELL-55SXI is a 4-Mbit (512K × 8) CMOS static RAM with an 8-bit data bus and automatic CE power-down to cut standby current when deselected. It operates from 4.5 V to 5.5 V over -40°C to +85°C, with a 55 ns speed grade. Supply current is 3.5 mA typical at 1 MHz (6 mA max), 15 mA typical at fmax (20 mA max), and standby is 2.5 µA typical (7 µA max). -55SXI is the Pb-free 32-pin SOIC option.

Features

  • 4-Mbit (512K × 8) CMOS SRAM
  • 45 ns read cycle time (tRC)
  • 4.5 V to 5.5 V supply (VCC)
  • Automatic power-down (CE HIGH)
  • Standby current 2.5 µA typ
  • Standby current 7 µA max
  • Active current 3.5 mA typ @1 MHz
  • Data retention at VCC ≥2.0 V (VDR)
  • Data retention current 8.8 µA max
  • OE/CE/WE control read/write
  • 10 pF max CIN, 10 pF max COUT

Benefits

  • Fast SRAM reads for quick response
  • Works with 5 V logic supplies
  • Auto power-down cuts idle power
  • µA standby extends battery life
  • Low active current reduces heat
  • Retains data with 2 V backup rail
  • Low ICCDR suits always-on memory
  • Simple CE/OE enables expansion
  • High-Z outputs ease bus sharing
  • Low pin capacitance supports speed

Applications

Documents

Design resources

Developer community