CY62128EV30LL-45SXI
Active and preferred
RoHS Compliant
Lead-free

CY62128EV30LL-45SXI

Datasheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CY62128EV30LL-45SXI
CY62128EV30LL-45SXI
ea.
Datasheet


Product details

  • Density
    1 MBit
  • Family
    MoBL™ SRAM
  • Interfaces
    Parallel
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) max
    3.6 V
  • Operating Voltage range
    2.2 V to 3.6 V
  • Organization (X x Y)
    128K x 8
  • Peak Reflow Temp
    260 °C
  • Qualification
    Industrial
  • Speed
    45 ns

Recommended
OPN
CY62128EV30LL-45SXI
Product Status active and preferred
Infineon Package
PG-DSO-32
Package Name SOIC-32 (51-85081)
Packing Size 500
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-32
Package Name SOIC-32 (51-85081)
Packing Size 500
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
TW
Country of Diffusion (CoD)
US
ea.
in stock
CY62128EV30LL-45SXI is a 1-Mbit (128K × 8) CMOS asynchronous SRAM for battery-powered 3 V designs. It operates from 2.2 V to 3.6 V over -40°C to +85°C and delivers 45 ns access time. Ultra-low power includes 1.3 mA typ at 1 MHz active current and 1 µA typ (4 µA max) automatic power-down standby using CE1/CE2, plus high-impedance outputs when deselected or OE HIGH. The -45SXI ordering code is a Pb-free 32-pin 450-mil SOIC.

Features

  • 1-Mbit SRAM organized as 128K × 8
  • 45 ns read/write cycle time
  • 2.2 V to 3.6 V single-supply VCC
  • Automatic CE power-down (ISB1/2)
  • Standby current 1 µA typ, 4 µA max
  • Active current 1.3 mA typ at 1 MHz
  • Data retention at VCC = 1.5 V (VDR)
  • Data retention current 3 µA max
  • OE/WE tri-state control of I/O bus
  • 10 pF max input/output capacitance
  • ESD > 2001 V (MIL-STD-883 3015)
  • -40°C to +85°C operating ambient

Benefits

  • Fits small code/data storage needs
  • 45 ns enables fast memory accesses
  • 2.2–3.6 V works with 3 V rails
  • Power-down cuts idle consumption
  • µA standby extends battery life
  • Low active current reduces power
  • Retains data in backup mode
  • 3 µA max eases keepalive design
  • Tri-state bus simplifies expansion
  • Low capacitance helps signal integrity
  • ESD robustness reduces field fails
  • -40°C to +85°C boosts reliability

Applications

Documents

Design resources

Partner solutions

Developer community