BSC010N04LST

BSC010N04LST

OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness

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BSC010N04LST
BSC010N04LST


Product details

  • Budgetary Price €/1k
    1.09
  • ID (@25°C) max
    292 A
  • IDpuls max
    1168 A
  • Mounting
    SMD
  • Operating Temperature range
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Pin Count
    8 Pins
  • Polarity
    N
  • Ptot max
    167 W
  • Qgd
    15 nC
  • QG (typ @10V)
    95 nC
  • RDS (on) (@10V) max
    1 mΩ
  • RthJA max
    50 K/W
  • RthJC max
    0.9 K/W
  • Rth
    0.5 K/W
  • VDS max
    40 V
  • VGS(th) range
    1.2 V to 2 V
  • VGS(th)
    1.48 V

OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated MOSFET devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature.

Features

  • Low RDS(on)
  • Optimized for synchronous rectification
  • Enhanced 175°C capability in SuperSO8

Benefits

  • Longer life time
  • Highest efficiency and power density
  • Highest system reliability
  • Thermal robustness

 

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