Active and preferred
RoHS Compliant
Lead-free

BAT15-099R

ea.
in stock

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BAT15-099R
BAT15-099R
ea.

Product details

  • C @VR=0V
    0.29 pF
  • Configuration
    Cross-over ring quad
  • IF max
    110 mA
  • VF
    0.25 V
  • VR max
    4 V
OPN
BAT15099RE6327HTSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free No
RoHS Compliant Yes
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 3000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.

Applications

Documents

Design resources

Developer community

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