Infineon introduces industry-first 24 kW SiC-based battery backup unit reference design for high-voltage AI data center architecture

Market News

Jun 02, 2026

Munich, Germany – 02 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a 24 kW battery backup unit (BBU) DC-DC reference design for high-voltage (HV) DC bus architectures in artificial intelligence (AI) data centers. The design is the first of its kind to operate directly from a battery stack to an 800 V DC bus, using 650 V and 1200 V silicon carbide (SiC) technology. It achieves a power density of 450 W/in³ and efficiency exceeding 99 percent within the same physical form factor as current low-voltage (LV) BBU implementations, addressing a key infrastructure bottleneck as data centers transition to higher-voltage DC distribution.

“Powering AI at scale demands a systemic approach that optimizes every stage of the power delivery chain, from grid connection to the processor core,” says Magdalene Boebel, Senior Vice President and Business Line Head Power System ICs at Infineon. “Our 24 kW high-voltage BBU reference design, operating directly on an 800 V DC bus, sets a new benchmark in power density and efficiency, giving data center architects a fully integrated solution to meet the most demanding AI infrastructure requirements.”

The reference design is based on a multi-level, multiphase non-isolated architecture combining stacked, interleaved, and coupled boost and buck stages. This approach reduces magnetic component volume directly, without relying on flying capacitors. A shared switching-leg topology establishes a common current path between the charge and discharge stages, enabling zero-voltage switching (ZVS) across the operating range. The outcome is reduced current ripple, fully integrated magnetics, and fast transient response, which are characteristics increasingly critical as AI server power draw becomes more dynamic and less predictable.

The compact module measures 112 x 88 x 118 mm and integrates a 24 kW main power stage with a 2.4 kW auxiliary supply. Charger and discharger blocks share the EMI filter, capacitors, and protection MOSFETs, reducing total component count. Best-in-class SiC junction gate field-effect transistors (JFETs) provide ORing and hot-swap capability. A planar transformer combined with CoolSET™ implements the auxiliary SMPS in a compact, cost-efficient footprint.

The DC-DC conversion stage is built around the CoolSiC™ MOSFET IMT65R033M2H, a 650 V device qualified for bidirectional buck-boost DC-DC operation in HV BBU applications. Its low conduction and switching losses support stage efficiencies of higher than 99 percent, reducing thermal load at rack level. During grid disturbances, generator switchovers, or outages, the device transfers energy rapidly between the HV DC bus and the battery with minimal losses, extending hold-up time reliably. A 650 V breakdown rating, robust body diode, 175 °C junction temperature rating, and .XT packaging technology provide resilience under voltage spikes, high dv/dt transients, and continuous thermal cycling. Consistent Vgs(th) characteristics across devices simplify multi-phase design and support redundant rack configurations. This architecture is documented in Infineon's REF_12KW_HFHD_PSU reference design, which demonstrates the IMT65R033M2H in high-power DC-DC stages for rack-level HV BBU applications.

The complete bill of materials comprises the following Infineon components: CoolSiC MOSFET 650 V Generation 2 including the IMT65R033M2H, EiceDRIVER™ gate drivers, TLE497x current sensors, PSOC™ Performance line MCU, CoolSET IC for the auxiliary SMPS, and a 1.7 kV SiC MOSFET.

Further design characteristics include reduced common-mode noise with negligible AC components, and fully integrated magnetics. Three power cards provide mechanical connections for the DC positive, DC negative, and midpoint rails while simultaneously serving as structural elements of the assembly, contributing to the solution's overall compactness.

The transition to higher-voltage DC bus architectures in data centers is driven by efficiency and distribution loss advantages at rack and facility scale. BBUs are a key component of this infrastructure shift, maintaining continuous power delivery to AI servers during grid events. The 24 kW HV BBU reference design demonstrates how SiC-based DC-DC conversion can meet the density, efficiency, and reliability requirements of this transition. Infineon's portfolio spanning silicon (Si), SiC, and gallium nitride (GaN) covers the full power delivery chain from grid to processor core.

Availability

More information about Infineon's battery backup unit solutions for AI data centers, including technical documentation and reference design details, is available at www.infineon.com/bbu-ai.

Infineon at PCIM Europe 2026

PCIM Europe will take place in Nuremberg, Germany, from 9 to 11 June 2026. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth 470. For press inquiries, please contact media.relations@infineon.com. Industry analysts interested in a briefing can email MarketResearch.Relations@infineon.com. Information about Infineon’s PCIM 2026 show highlights is available at www.infineon.com/pcim.  

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

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Infineon introduces a 24 kW battery backup unit DC-DC reference design for high-voltage DC bus architectures in AI data centers

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Michael Burner

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