Infineon expands CoolSiC™ JFET portfolio with normally-off variants for AI data centers and industrial applications

Market News

Jun 02, 2026

Munich, Germany – 2 June 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is expanding its CoolSiC™ JFET portfolio in response to growing demand from AI data centers and the shift towards solid-state power protection. With new devices, package options and configurations, the company aims to support high-performance power distribution and protection systems. The first 750 V and 1200 V CoolSiC™ JFET devices in Q-DPAK packages, introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will present additional package options and normally-off variants, further strengthening its discrete portfolio for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches and power distribution architectures in AI data centers, including power supply units (PSUs), power backup units (PBUs) and intermediate bus converter (IBC) hot-swap and eFuse designs.

In these applications, power semiconductors operate predominantly in the on-state, while fault events are brief and infrequent. As a result, conduction losses, linear mode robustness, and avalanche capability are key design parameters. To address these requirements, Infineon is introducing a CoolSiC JFET 1200 V in the widely used TO-247-4 package. With on-resistance (RDS(on)) starting at 5.0 mΩ, it enables drop-in replacement in existing SiC MOSFET designs that use standard through-hole packages, without requiring PCB redesign. The portfolio is further extended by normally-off CoolSiC JFET configurations, combining a CoolSiC JFET with an Infineon OptiMOS™ low-voltage Si MOSFET in a single package: 

  • The Dual Drive configuration provides separate access to both the SiC JFET and Si MOSFET gates, enabling full control and design flexibility at the PCB level. It also supports overdrive operation at VGS = 2 V, reducing RDS(on) by around 10 percent. The 750 V version is available in TOLL and Q-DPAK packages, while the 1200 V version is available in Q-DPAK. 
  • The Cascode configuration integrates the SiC JFET gate internally and exposes only the MOSFET gate. This allows simple, plug-and-play operation with standard gate drivers and no need for specialized circuitry. It is suited for applications where both switching and conduction losses are relevant. The 750 V version is available in a TOLL package.

The production-released CoolSiC JFET in Q-DPAK delivers RDS(on) values as low as 1.6 mΩ (750 V) and 2.3 mΩ (1200 V), among the lowest available in SiC at these voltage classes.

All devices are based on Infineon’s .XT interconnection technology with diffusion soldering, improving thermal performance and robustness under pulsed and cyclic loads. They are qualified under real-world operating conditions to enable reliable performance during overload and fault events. Solid-state protection based on CoolSiC JFET enables switching speeds orders of magnitude faster than electromechanical systems, reducing damage risk, minimizing downtime, and extending system lifetime. In AI data centers, this fault isolation helps protect high-value compute and memory assets while supporting higher power density and uptime. In industrial applications such as SSCBs, relays and battery management systems, the devices enable long-term conduction reliability combined with rapid fault isolation.

With Q-DPAK, TO-247-4, and TOLL packages as well as normally-on, Dual Drive, and Cascode options, Infineon now offers a broad CoolSiC JFET discrete portfolio covering a wide range of RDS(on) ratings, gate drive concepts and assembly requirements with the valued reliability of its CoolSiC products.

Availability

The CoolSiC JFET 750 V and 1200 V in Q-DPAK will enter mass production in 2026. Engineering samples of additional variants, including TO-247-4, Dual Drive, and Cascode configurations, are now available and will also enter mass production in 2026.

Infineon will demonstrate the CoolSiC JFET discrete portfolio at PCIM Europe 2026 in Nuremberg in Hall 7, Booth 470.

More information is available at www.infineon.com/jfet.

Infineon at PCIM Europe 2026

PCIM Europe will take place in Nuremberg, Germany, from 9 to 11 June 2026. Infineon will present its products and solutions for decarbonization and digitalization in hall 7, booth 470. For press inquiries, please contact media.relations@infineon.com. Industry analysts interested in a briefing can email MarketResearch.Relations@infineon.com. Information about Infineon’s PCIM 2026 show highlights is available at www.infineon.com/pcim.

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

Follow us: Facebook - LinkedIn

Press Photos

The 750 V and 1200 V CoolSiC™ JFET devices in Q-DPAK packages are now entering mass production. In addition, Infineon is introducing a CoolSiC JFET 1200 V in the widely used TO-247-4 package.

JPEG

2126x1187 px

Download
×
img-model

Infineon’s CoolSiC™ JFET portfolio is extended by normally-off configurations, combining a CoolSiC JFET with an Infineon OptiMOS™ low-voltage Si MOSFET in a single package

JPEG

2126x1187 px

Download
×
img-model

Information Number : infgip202606-095

avatar

Veronika Seifried

Spokesperson Industrial and Infrastructure, GIP Division

+49 89 234 61662

Send email