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IMBG120R030M1H
Product details
|
OPN
|
IMBG120R030M1HXTMA1 |
|---|---|
| Product Status | not for new design |
| Infineon Package | |
| Package Name | D2PAK 7-pin |
| Packing Size | 1000 |
| Packing Type | TAPE & REEL |
| Moisture Level | 1 |
| Moisture Packing | NON DRY |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
|
|
|
| Product Status | not for new design |
|---|---|
| Infineon Package | |
| Package Name | D2PAK 7-pin |
| Packing Size | 1000 |
| Packing Type | TAPE & REEL |
| Moisture Level | 1 |
| Moisture Packing | NON DRY |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Features
- Very Low switching losses
- Short-circuit withstand time, 3 µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage
- VGS(th) = 4.5 V
- Robust against parasitic turn-on
- 0V turn-off gate voltage applicable
- Robust diode for hard commutation
- .XT interconnection technology
- Package creepage distances > 6.1 mm
- And clearance distances, > 6.1 mm
- Sense pin for optimized switching
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