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  • MOSFET (Si/SiC)
  • N-Channel Power MOSFET
  • 500V-950V N-Channel Power MOSFET
  • IPL60R075CFD7

Overview

Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. 

Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power

Perfect match! 2EDN EiceDRIVER™ family

Enabling optimized system solutions for high power designs

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600V CoolMOS™ CFD7 superjunction MOSFET

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Si | SiC | GaN Positioning in ACDC applications

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Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in ACDC applications!

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