Gate Driver ICs
EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs
Gate Driver ICs subcategories
Every switch needs a driver – the right driver makes a difference. Power electronics applications employ power device switches. And power device switches require optimum gate drive solutions. That’s why we offer more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.
EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1-A up to 10-A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. Download your copy of the Gate Driver Selection Guide 2019 now.
Please find your way to the right Gate Driver IC:
Select one of our product highlights for detailed information
EiceDRIVER™ gate driver IC technologies
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.
EiceDRIVER™ gate driver IC applications
Our EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode(BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation(functional, basic and reinforced), etc.
Ideal solutions are available for hundreds of end applications in such markets as automotive, industrial motor drives, solar inverters, EV charging, robotics, UPS, server and telecom power supply, small and major home appliances, battery-driven applications, and high-voltage lighting.
Whitepaper: Power device choices in the new small home appliance market
Energy efficient, modern-looking, wipe clean and hermetically sealed surfaces are only a few characteristics that a design engineer has to fit into one small home appliance. Infineon offers solutions for the two key areas – induction heating with its TRENCHSTOP™ F Series Protected IGBT and motor control solutions using our energy-efficient, integrated power devices CIPOS™ Intelligent Power Modules and iMOTION™ Integrated Design Platform.
Dive deeper and discover more about the changing landscape of the SHA market and enablement of electronic solutions in this free whitepaper!
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.