GaN transistors (GaN HEMTs)

Explore CoolGaN™ Transistors, discrete and integrated normally-off devices, ranging from 60 V up to 700 V, for highest efficiency and power density 

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Get an overview of Infineon’s GaN transistors

Infineon’s gallium nitride (GaN) transistors are available in voltage ranges from 60 V up to 700 V. The fast turn-on and turn-off speeds with minimal switching losses are crucial for AI data centers, EVs, renewable energy, humanoid robots, consumer applications and many more.

With various packages and rigorous qualifications exceeding industry standards, Infineon’s GaN devices enable high-frequency switching while reducing costs and system size. Elevate your designs with Infineon’s GaN transistors.

What are the features of GaN transistors from Infineon?

  • 60 V – 700 V GaN transistors: Infineon’s CoolGaN™ Transistor portfolio covers a wide voltage range from 60 V to 700 V, enabling optimized designs across low-, medium-, and high power applications with excellent efficiency and scalability.

  • Top-, dual- and bottom-side cooled packages: Advanced package designs supporting top-, dual and bottom-side cooling enable efficient heat dissipation, improving thermal performance and allowing higher power density in compact system layouts.

  • Ultrafast switching speed: GaN transistors deliver ultrafast switching performance, significantly reducing switching losses and enabling higher switching frequencies for smaller, lighter, and more efficient power systems.

  • Superior FOMs (Figures of Merit): Infineon’s GaN devices achieve excellent figures of merit by combining low RDS(on) and low charge characteristics, resulting in highly efficient power conversion with minimized losses.

  • Continuous current: 4 A – 100 A: With a broad current range from 4 A up to 100 A, these GaN transistors provide flexibility to address diverse applications, from compact consumer designs to high-power industrial systems.

  • RDS(on)typ. from 1.4 mΩ to 500 mΩ: A wide range of on-resistance options allows designers to precisely balance conduction losses, efficiency, and cost depending on the specific performance requirements of the application.

  • Enhancement mode (e-mode): Normally-off enhancement-mode operation ensures simple, safe, and fail-safe design implementation, making GaN technology easier to integrate compared to traditionally normally-on devices.

  • No reverse-recovery charge: The absence of reverse-recovery charge eliminates reverse-recovery losses, improving efficiency and enabling cleaner switching behavior especially in hard-switching topologies.

  • Ultra-low gate and output charge: Extremely low gate and output charge reduce driving losses and enable faster switching transitions, supporting higher frequency operation and improved overall system efficiency.

 

What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

Gate driver ICs for GaN

Selecting the right gate driver IC is critical to optimize performance of the GaN while minimizing system cost. Infineon's comprehensive portfolio of EiceDRIVER™ gate driver ICs offers a range of single- and dual-channel isolated, level-shift, and non-isolated gate driver designed for both Infineon's CoolGaN™ Schottky Gate (SG) HEMTs  and gate injection transistor (GIT)  HEMTs.

Explore the EiceDRIVER(TM) portfolio and find the right driver for you. 

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, Thin-PAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

GaN system design partners

Infineon CoolGaN™ delivers discrete and integrated GaN power solutions with proven reliability, assured long‑term supply, and expert support to enable highest performance and more efficient systems across consumer, industrial, and automotive applications. Together with our global go-to-market (G2M) partner ecosystem, we provide turnkey solutions, reference designs, services and disruptive technologies that shorten development cycles, accelerate time-to-market and provide innovative and differentiating features to our customers’ products

Explore our partners
Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us
Get an overview of Infineon’s GaN transistors

Infineon’s gallium nitride (GaN) transistors are available in voltage ranges from 60 V up to 700 V. The fast turn-on and turn-off speeds with minimal switching losses are crucial for AI data centers, EVs, renewable energy, humanoid robots, consumer applications and many more.

With various packages and rigorous qualifications exceeding industry standards, Infineon’s GaN devices enable high-frequency switching while reducing costs and system size. Elevate your designs with Infineon’s GaN transistors.

What are the features of GaN transistors from Infineon?

  • 60 V – 700 V GaN transistors: Infineon’s CoolGaN™ Transistor portfolio covers a wide voltage range from 60 V to 700 V, enabling optimized designs across low-, medium-, and high power applications with excellent efficiency and scalability.

  • Top-, dual- and bottom-side cooled packages: Advanced package designs supporting top-, dual and bottom-side cooling enable efficient heat dissipation, improving thermal performance and allowing higher power density in compact system layouts.

  • Ultrafast switching speed: GaN transistors deliver ultrafast switching performance, significantly reducing switching losses and enabling higher switching frequencies for smaller, lighter, and more efficient power systems.

  • Superior FOMs (Figures of Merit): Infineon’s GaN devices achieve excellent figures of merit by combining low RDS(on) and low charge characteristics, resulting in highly efficient power conversion with minimized losses.

  • Continuous current: 4 A – 100 A: With a broad current range from 4 A up to 100 A, these GaN transistors provide flexibility to address diverse applications, from compact consumer designs to high-power industrial systems.

  • RDS(on)typ. from 1.4 mΩ to 500 mΩ: A wide range of on-resistance options allows designers to precisely balance conduction losses, efficiency, and cost depending on the specific performance requirements of the application.

  • Enhancement mode (e-mode): Normally-off enhancement-mode operation ensures simple, safe, and fail-safe design implementation, making GaN technology easier to integrate compared to traditionally normally-on devices.

  • No reverse-recovery charge: The absence of reverse-recovery charge eliminates reverse-recovery losses, improving efficiency and enabling cleaner switching behavior especially in hard-switching topologies.

  • Ultra-low gate and output charge: Extremely low gate and output charge reduce driving losses and enable faster switching transitions, supporting higher frequency operation and improved overall system efficiency.

 

What are the benefits of Infineon’s GaN transistors?

•   Looking to enhance your system's efficiency? By utilizing Infineon's GaN transistors, you can significantly reduce switching losses, leading to improved overall system efficiency.

•   How about improving power density? With their higher switching frequencies, Infineon's GaN devices allow for smaller passive components, which can help reduce the overall size of your designs.

•   Want to reduce the weight of your system? Infineon's GaN transistors enable the use of fewer materials and smaller components, resulting in a reduced system weight. With their superior switching speed, these transistors deliver high power density while minimizing energy losses across various applications, empowering designers to create smaller, lighter, and more compact systems that still offer top performance.

Gate driver ICs for GaN

Selecting the right gate driver IC is critical to optimize performance of the GaN while minimizing system cost. Infineon's comprehensive portfolio of EiceDRIVER™ gate driver ICs offers a range of single- and dual-channel isolated, level-shift, and non-isolated gate driver designed for both Infineon's CoolGaN™ Schottky Gate (SG) HEMTs  and gate injection transistor (GIT)  HEMTs.

Explore the EiceDRIVER(TM) portfolio and find the right driver for you. 

Gate driver ICs for GaN
GaN packaging

The portfolio in the 60 V to 200 V range housed in the PQFN 3x3 and PQFN 3x5 packages has a moisture sensitivity level (MSL) rating of 1, which makes them suitable for standard storage and handling conditions.

In the high-voltage arena (≥600 V), we offer a very broad variety of SMD packages, ranging from TOLL, TOLT, Thin-PAK 5x6, DFN 8x8, to top- and bottom-side cooled DSO. These packages cater to diverse design requirements and offer a perfect blend of compact size, improved thermal performance, cost-effectiveness, and design flexibility.

GaN system design partners

Infineon CoolGaN™ delivers discrete and integrated GaN power solutions with proven reliability, assured long‑term supply, and expert support to enable highest performance and more efficient systems across consumer, industrial, and automotive applications. Together with our global go-to-market (G2M) partner ecosystem, we provide turnkey solutions, reference designs, services and disruptive technologies that shorten development cycles, accelerate time-to-market and provide innovative and differentiating features to our customers’ products

Explore our partners
Interested in our CoolGaN™ solutions?

Infineon’s discrete and integrated GaN solutions deliver highest efficiency and power density in consumer, industrial, and automotive applications. If you are interested in our CoolGaN™ products and solutions, don’t hesitate to contact our GaN experts.

Get in touch with us
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