The BGA7H1N6 is a front-end low noise amplifier (LNA) for LTE applications in the range from 2300 MHz to 2690 MHz. The LNA uses as low as 1 external component, and provides 12.5 dB gain and 0.9 dB noise figure at 1.8 V, 4.7 mA in the application. The BGA7H1N6 is based upon Infineon Technologies's Silicon Germanium technology. Please specify your frequency requirement when you order the board.
Summary of Features:
• Low noise figure in the application
• Low current consumption: 4.7 mA
• Operating frequencies: 2300 - 2690 MHz
• Supply voltage: 1.5 V to 3.3 V
• Digital on/off switch (1V logic high level)
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Ultra small leadless and halogen-free TSNP-6-2 package (0.7 x 1.1mm2) with a very low height of 0.4mm
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