FF6MR12W2M1HP_B11
Active and preferred
RoHS Compliant

FF6MR12W2M1HP_B11

CoolSiC™ MOSFET half-bridge module 1200 V
ea.
in stock

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FF6MR12W2M1HP_B11
FF6MR12W2M1HP_B11
ea.


Product details

  • Applications
    UPS, Solar, EV Charger, ESS, SST
  • Configuration
    Half-bridge
  • Dimensions (width)
    48 mm
  • Dimensions (length)
    62.8 mm
  • Features
    PressFIT, TIM
  • Housing
    Easy 2B
  • Qualification
    Industrial
  • RDS (on) (@ Tj = 25°C)
    4 mΩ

OPN
FF6MR12W2M1HPB11BPSA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 18
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead-free No
Halogen Free No
RoHS Compliant Yes
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
AT
Infineon stock last updated:
ea. in stock

Product Status
Active
Infineon Package
Package Name -
Packing Size 18
Packing Type TRAY
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
DE
Country of Diffusion (CoD)
AT
ea.
in stock
EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 6 mΩ G1 with integrated NTC temperature sensor and PressFIT Contact Technology.

Features

  • Best-in-class packages with 12mm height
  • Leading edge WBG material
  • Very low module stray inductance
  • Enhanced CoolSiC™ MOSFET Gen 1
  • Enlarged gate drive voltage window
  • Voltage window from 15 to 18 & 0 to -5 V
  • Extended maximum gate-source voltages
  • Gate-source voltages of +23 V and -10 V
  • Tvjop: overload condition up to 175°C
  • Integrated NTC temperature sensor

Benefits

  • Outstanding module efficiency
  • System cost advantages
  • System efficiency improvement
  • Reduced cooling requirements
  • Enabling higher frequency
  • Increase of power density
Documents

Design resources

Developer community