Overview

Infineon 400 V / 440 V CoolSiC™ Silicon Carbide MOSFET discretes were especially developed for applications such as AI Server power supplies, Industrial and medical power suppliers, Audio, and Solar to offer cost / performance alternative to 650 V discrete MOSFETs. For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

Key features
  • V(BR)DSS up to 400 V / 440 V
  • On-resistance from 11 mΩ to 45 mΩ
  • TOLL and D2PAK-7 SMD packages
  • TO247 and TO247 4pin THD packages
  • low RDS(on) temperature coefficient
  • low Qgd, Qoss, Qfr, Eoss
  • High slew rate control & Coss linearity
  • Easy unipolar gate driving
  • Gate threshold voltage, VGS(th) = 4.5 V
  • 100% avalanche tested
Applications
Audio amplifier solutions
Battery management systems(BMS)
Motor control
Server power supply units(PSU)
Renewables

Products

Products

About

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort.

More about CoolSiC MOSFETS in discrete housings
400 V CoolSiC™ MOSFET

For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

Discrete CoolSiC™ MOSFET

CoolSiC™ MOSFET discretes are specifically designed to deliver exceptional efficiency and reliability in power electronics applications. These devices are available from 400 V to 2000 V and feature on-resistance values from 7mΩ  to 1000mΩ . They are optimized for hard- and resonant-switching topologies like power factor correction circuits, DC-DC converters, and DC-AC inverters. An integrated fast freewheeling diode simplifies circuit design by enabling hard switching without additional diode chips. Infineon's CoolSiC™ MOSFET discretes reduce system complexity, have increased power density and highest efficiency for reduced cooling effort.

More about CoolSiC MOSFETS in discrete housings

400 V CoolSiC™ MOSFET

For power conversion up to 600 VDC_LINK voltage in 2-level and 3-level topologies where the best price / performance ratio is needed.

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