Active and preferred
RoHS Compliant
Lead-free

S25FL128SAGNFV010

Data Sheet
package
software
ea.
in stock

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S25FL128SAGNFV010
S25FL128SAGNFV010
ea.
Data Sheet

Product details

  • Density
    128 MBit
  • Family
    FL-S
  • Interface Bandwidth
    52 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    133 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2035
  • Qualification
    Industrial
Recommended
OPN
S25FL128SAGNFV010
Product Status active and preferred
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18827)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18827)
Packing Size 676
Packing Type TRAY
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The S25FL128SAGNFV010 is a 128 Mb SPI Multi-I/O NOR flash memory with Infineon's 65-nm MIRRORBIT™ technology and Eclipse architecture. It operates from 2.7 V to 3.6 V core and 1.65 V to 3.6 V I/O supply, supports up to 133 MHz clock rates, and achieves maximum read speeds of 52 MBps (Quad) and 80 MBps (Quad DDR).

Features

  • CMOS 3.0 V core with versatile I/O
  • SPI interface with multi-I/O support
  • DDR and SDR clocking options
  • Extended addressing: 24- or 32-bit
  • Multiple read modes: Normal, Fast, Dual
  • Page programming up to 1.5 MBps
  • Automatic ECC with single-bit correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles min
  • 20-year data retention min
  • 1024-byte OTP security region
  • Advanced sector and block protection

Benefits

  • Flexible I/O simplifies system integration
  • High-speed SPI boosts data throughput
  • DDR/SDR options enable design flexibility
  • Extended addressing supports large memory
  • Multiple read modes optimize performance
  • Fast programming accelerates production
  • ECC improves data reliability
  • Sector options ease legacy migration
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region enables secure device ID
  • Robust protection enhances data security

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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