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Q3 FY 2026 concluded with record sales driven by strong AI business; further significant increase in revenue and margin expected in Q4 FY 2026
Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers
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IRHNKC9A97230
Product details
-
Die Size3
-
ESD ClassClass 2
-
GenerationR9
-
ID (@25°C) max-15 A
-
Optional TID Rating (kRad(si))100 300
-
PackageSMD-0.5e
-
PolarityP
-
QG49 nC
-
QPL Part Number2N7661U3CE
-
QualificationCOTS
-
RDS (on) (@25°C) max0.175 Ω
-
TID max100 Krad(Si)
-
VBRDSS-200 V
-
VF max-1.3 V
| Recommended | |
|
OPN
|
|
| Product Status | active and preferred |
| Infineon Package | |
| Package Name | Enhanced SMD0.5 |
| Packing Size | N/A |
| Packing Type | N/A |
| Moisture Level | N/A |
| Moisture Packing | N/A |
| Lead-free | No |
| Halogen Free | Yes |
| RoHS Compliant | No |
|
|
|
| Product Status |
Active
|
|---|---|
| Infineon Package | |
| Package Name | Enhanced SMD0.5 |
| Packing Size | 0 |
| Packing Type | |
| Moisture Level | - |
| Moisture Packing | |
| Lead Free | |
| Halogen Free | |
| RoHS Compliant | |
IRHNKC9A97230 P-channel MOSFET is rad hard, with -200 V and -15 A, in a single SMD-0.5e enhanced package with a ceramic lid and electrical performance up to 100 krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.
Features
- SEE hardened
- Low RDS(on)
- Rugged SOA
- Improved Avalanche Energy
- Simple drive requirements
- Hermetically sealed
- Ceramic package
- Light weight
- Surface mount
Applications
Documents
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